TOSHIBA A discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances
.JPG)
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a 1100 V discrete IGBT, “GT30J110SRA,” to be used for home appliances such as IH rice cookers and microwave ovens using voltage resonance circuits with AC100 V input.
The new product GT30J110SRA has improved characteristics, featuring lower loss, short-circuit current suppression, a wider safe operating area and lower radiated emissions than the existing product[1].
Lower loss is offered by reducing turn-off switching loss and diode conduction loss. It's possible to use smaller gate drive resistance than the past by reducing radiation noise. Its typical turn-on time[2] is 0.2 μs, about 20 % reduction from the existing product[1], and its typical turn-off time[2] is 0.33 μs, about 29 % reduction. The diode typical forward voltage[3] is 1.40 V which is about 33 % reduction, helping reduce the power consumption of the equipment.
Short-circuit current suppression is offered by reducing saturation current. This can reduce the short- circuit current of a resonance capacitor during equipment start-up. The peak value of the typical saturation current of the new product is 200 A, about 40 % reduction from the existing product[1], while its collector-emitter saturation voltage is equivalent to that of the existing product[1] for 60 A or lower.
Its wide safe-operating area has been extended on the high voltage side compared with the existing product[1], making the product less likely to break down.
Low radiated emissions[4] are offered by optimizing its chip structure. Its radiated emissions are 35.8 dBμV/m at around 30 MHz where the radiated emissions level is the strongest, about 10 dBμV/m reduction from the existing product[5].
[1] Existing product GT60PR21
[2] @VCE=600 V, IC=60 A, VGE=＋15 V, Ta=25 °C
[3] @IF=30 A, VGE=0 V, Ta=25 °C
[4] Values measured by Toshiba.
[5] Existing product GT40QR21
Features
- 6.5th generation
- Built-in diode by RC structure
- Low diode forward voltage : VF=1.40 V (typ.) @IF=30 A, Ta=25 °C
Applications
Voltage resonance for home appliances
- IH rice cooker
- IH cooking heater
- Microwave oven, etc.
Product Specifications
(Unless otherwise specified, @Ta=25 °C)
Internal Circuit
Application Circuit Example
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
Characteristics Curves
- The new product features a diode forward voltage[3] of typical 1.40 V at 25 °C and 30 A, about 33 % reduction from the existing product[1], helping reduce the power consumption of the equipment.
- The new product has changed the chip design to reduce the capacitor short-circuit current generated during startup for voltage resonance compared with the existing product[1]. The collector current is suppressed to 150 to 200 A at TC=25 °C and VGE=15 V. Its collector-emitter saturation voltage is also equivalent to that of the existing product[1] for 60 A or lower.
- The new product offers better trade-off characteristics with a wide gate resistance range compared to the existing product[1].
