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2018-01-10  5056

Toshiba Electronic Devices & Storage Corporation Unveils New-Generation 600V Planar MOSFET Series

January 10, 2018
Toshiba Electronic Devices & Storage Corporation

π-MOS IX series of 600V planar MOSFET combines high efficiency and low noise

π-MOS IX series 
 

TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.
 

With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.
 

Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.
 

Applications

  • Small to medium switching power supplies for notebook PC AC adapters and game console chargers
  • Lighting power supplies

Features

  • Combines high efficiency and low noise
  • Rated avalanche current equivalent to the rated DC current

Main Specifications

Part Number Package Absolute Maximum Rating RDS(ON)
MAX (Ω)
at VGS=10V
Qg
Typ.
(nC)
Ciss
Typ.
(pF)
Current generation
(π-MOS VII series)
Part Number
VDSS (V) ID (A)
TK650A60F TO-220SIS 600 11 0.65 34 1320 TK11A60D
TK750A60F TO-220SIS 600 10 0.75 30 1130 TK10A60D
TK1K2A60F TO-220SIS 600 6 1.2 21 740 TK6A60D (1.25Ω)
TK1K9A60F TO-220SIS 600 3.7 1.9 14 490 TK4A60DB (2.0Ω)

Note:

[1] Comparison between TK10A60D and TK750A60F (65W notebook PC adapter in the 200MHz region),