Toshiba Launches 100V N-channel Power MOSFETs in Compact Package for Automotive Applications
December 25, 2019
Toshiba Electronic Devices & Storage Corporation
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two new 100V N-channel power MOSFETs for automotive 48V electrical system applications. The line-up includes the low On-resistance “XPH4R10ANB,” which has a drain current of 70A, and the “XPH6R30ANB,” with a 45A drain current. Mass production shipments start today.
The new products are Toshiba’s first[1] 100V N-channel power MOSFETs in the compact SOP Advance (WF) package for automotive applications. The wettable flank terminal structure of the package allows its automatic visual inspection when mounted on a circuit board, which helps increase reliability. The low On-resistance of the new MOSFETS helps reduce equipment power consumption; and the XPH4R10ANB delivers industry-leading[2] low On-resistance.
Applications
-
Automotive equipment
Power supply (DC/DC converter) and LED headlights, etc. (motor drives, switching regulators and load switches)
Features
- Toshiba’s first[1] 100V products for automotive applications using the small, surface mount SOP Advance (WF) package
- AEC-Q101 qualified
-
Low On-resistance:
RDS(ON)=4.1mΩ (max) @VGS=10V (XPH4R10ANB)
RDS(ON)=6.3mΩ (max) @VGS=10V (XPH6R30ANB) - SOP Advance (WF) package with wettable flank terminal structure
Main Specifications
(Unless otherwise specified, @Ta=25°C)
|
Part Number |
Polarity |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Channel-to-case thermal impedance Zth(ch-c) max @Tc=25℃ (℃/W) |
Package |
Series |
||||
|---|---|---|---|---|---|---|---|---|---|---|
|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain current (pulsed) IDP (A) |
Channel temperature Tch (℃) |
@VGS =6V |
@VGS =10V |
|||||
|
N-channel |
100 |
70 |
210 |
175 |
6.2 |
4.1 |
0.88 |
SOP Advance(WF) |
U-MOSVIII-H |
|
|
45 |
135 |
9.5 |
6.3 |
1.13 |
U-MOSVIII-H |
|||||