Toshiba Releases Automotive 40V N-channel Power MOSFETs in New Package
April 11, 2018
Toshiba Electronic Devices & Storage Corporation
— Reduced on-resistance from use of a small low-resistance package
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released two new MOSFETs “TPHR7904PB” and “TPH1R104PB” housed in the small low-resistance SOP Advance (WF) package, as new additions to the automotive 40V N-channel power MOSFET series. Mass production starts today.
Fabricated using the latest ninth generation trench U-MOS IX-H process and housed in a small low-resistance package, the new MOSFETs provide low on-resistance and thus help reduce conduction loss. The U-MOS IX-H design also lowers switching noise compared with Toshiba’s previous design (U-MOS IV), helping to reduce EMI (Electromagnetic Interference).
Applications
- Electric power steering (EPS)
- Load switches
- Electric pumps
Features
- Provides a maximum on-resistance, RDS(ON)max, of 0.79 mΩ from the use of the U-MOS IX-H process and the SOP Advance(WF) package.
- Low-noise characteristics reduce electromagnetic interference (EMI).
- Available in a small low-resistance package with a wettable flank terminal structure.
Wettable flank terminal
Main Specifications
(Unless otherwise specified, @Ta=25℃)
| Part Number |
Drain-Source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain-Source on-resistance RDS(ON) max.(mΩ) |
Built-in Zener Diode between Gate-Source | Series | |
|---|---|---|---|---|---|---|
| @VGS＝6V | @VGS＝10V | |||||
| TPH1R104PB | 40 | 120 | 1.96 | 1.14 | No | U-MOS IX |
| TPHR7904PB | 150 | 1.3 | 0.79 | No | U-MOS IX | |