Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency

March 30, 2020

Toshiba Electronic Devices & Storage Corporation

 - Expanding line-up of U-MOS X-H power MOSFET series -

TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.

The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.

Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS Ⅷ-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.

Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.

• Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
• Motor control equipment (Motor drive, etc.)

• The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
• Industry’s lowest level[3] On-resistance:

            RDS(ON)=2.43mΩ (max) ＠VGS=10V (TPH2R40QM)

            RDS(ON)=19mΩ (max) ＠VGS=10V (TPN19008QM)

• High channel temperature rating : Tch=175℃