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2021-07-13  2467

ROHM’s New Hybrid IGBTs with Built-In SiC Diode


In recent years, global efforts to reduce environmental burden and achieve a carbon-neutral and decarbonized society have spurred the proliferation of electrified vehicles (xEV). At the same time, the diversification of power semiconductors used in various vehicle inverter and converter circuits necessary to configure more efficient systems is currently underway, along with technological innovation of both ultra-low-loss SiC power devices (i.e. SiC MOSFETs, SiC SBDs) and conventional silicon power devices (e.g. IGBTs, Super Junction MOSFETs).

New Product Characteristics

To provide effective power solutions for a wide range of applications, ROHM is focusing not only on product and technology development for industry-leading SiC power devices, but for silicon products and driver ICs as well.

A variety of design support materials are also available on ROHM’s website, including SPICE models and application notes on drive circuit design necessary for integration and evaluation, supporting quick market introduction. ROHM is committed to continuing to contribute to minimizing environmental impact through system low power consumption and miniaturization by developing low-loss power devices that meet different needs and offering design tools as a solution.

 

Key Features

• Reduces loss by 67% vs conventional IGBTs, providing optimal cost performance for popular automotive electrical control units and industrial equipment
The breakthrough RGWxx65C series utilizes an SiC SBD as the freewheeling diode for the IGBT. ROHM low-loss SiC SBDs significantly reduce turn ON loss over silicon fast recovery diodes (FRDs) used in conventional IGBTs. This reduces loss by 67% over conventional IGBTs and 24% over SJ MOSFETS (which generally provides lower loss than IGBTs) when used in vehicle chargers. Furthermore, a high efficiency of over 97% is ensured over a wide operating frequency range when we use this device for automotive charger – 3% higher than existing IGBTs at 100kHz – contributing to lower power consumption and good cost performance in automotive and industrial equipment applications.


Effects of Reducing Turn ON Loss by Integrating an SiC SBD
Comparison of Power Conversion Efficiency

• AEC-Q101 qualification enables use under harsh environments These devices are qualified under the AEC-Q101 automotive standard for reliability, ensuring worry-free use even under severe conditions.

Application Examples

  • Automotive chargers (onboard chargers)
  • Vehicle DC/DC converters
  • Solar power inverters (power conditioners)
  • Uninterruptible power supplies (UPS)

 

Part No. Withstand Voltage VCES(V) Collector Current IC@100ºC (A) Conduction Loss VCE(sat) Typ (V) Freewheeling Diode AEC-Q101 Qualified Package
NEWRGW60TS65CHR 650 30 1.5 SiC SBD Yes TO-247N
NEWRGW80TS65CHR 40
NEWRGW00TS65CHR 50
☆RGW40NL65CHRB 20 TO-263L (LPDL)
☆RGW50NL65CHRB 25
☆RGW60NL65CHRB 30

☆: Under Development