Toshiba Releases Small MOSFET with High ESD Protection to Drive Headlight LED
March 23, 2018
Toshiba Electronic Devices & Storage Corporation
TOKYO--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
Applications
- Automotive headlight LED driver
Features
- Small package
- High ESD protection
- Low RDS(ON)
Main Specifications
(@Ta=25℃)
|
Items (Ta=25℃) |
SSM6N813R | ||
|---|---|---|---|
| Absolute maximum ratings |
Drain-source voltage VDSS (V) |
100 | |
|
Gate-source voltage VGSS (V) |
±20 | ||
|
Drain current ID (A) |
3.5 | ||
| Electrical Characteristics |
Drain-source on-resistance RDS(ON) max (mΩ) |
VGS=10V | 112 |
| VGS=4.5V | 154 | ||
|
Input capacitance Ciss typ. (pF) |
242 | ||
| Package | TSOP6F | 2.9mm×2.8mm; t=0.8mm | |
