2026-04-22 51
ROHM has developed a 5th generation SiC MOSFET that reduces on-resistance by approximately 30% at high temperatures.
ROHM has developed a 5th generation SiC MOSFET that reduces on-resistance by approximately 30% at high temperatures.
weblink:
https://www.rohm.com.tw/news-detail?news-title=2026-04-21_news_sic-mosfet&defaultGroupId=false
weblink:
https://www.rohm.com.tw/news-detail?news-title=2026-04-21_news_sic-mosfet&defaultGroupId=false

