Toshiba Electronic Devices & Storage Corporation Releases Small Dual MOSFET for Relay Drivers
January 29, 2018
Toshiba Electronic Devices & Storage Corporation
TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.
An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.
Applications
- Relay and solenoid control for automotive applications
- Relay and solenoid control for industrial applications
- Clutch control for OA equipment
Features
- Reduced board space and part count (pull-down resistor, series resistor and Zener diode integrated.)
- Low operating voltage of 3.0 V
- Dual package (2 in 1)
- AEC-Q101 qualified
Main Specifications
(@Ta=25℃)
| Items | Characteristics | ||
|---|---|---|---|
| Absolute maximum ratings |
Drain-source voltage VDSS (V) |
60 | |
|
Gate-source voltage VGSS (V) |
±12 | ||
|
Drain current ID (A) |
0.65 | ||
| Electrical Characteristics |
Drain-source on-resistance RDS(ON) max (mΩ) |
|VGS|=3.0V | 2400 |
| |VGS|=5.0V | 1800 | ||
|
Total gate charge Qg typ. (nC) |
1.5 | ||
|
Input capacitance Ciss typ. (pF) |
43 | ||
| Package | TSOP6F |
2.9mm×2.8mm; t=0.8mm |
|
Equivalent Circuits
