TOSHIBA SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F

oshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched 650 V/12 A Schottky Barrier Diodes (SBDs) "TRS12A65F" and "TRS12E65F" using silicone carbide (SiC), whiclh is a new material that enables power saving and high-efficiency of power supply PFCs. There are two types of packages, TRS12A65F uses isolation type TO-220F-2L and TRS12E65F uses non-isolation type TO-220-2L. Products with 12 A forward current are newly available to cope with the increase in power consumption of equipment.

The new products use second-generation improved JBS (Junction Barrier controlled Schottky) architecture, which reduces the figure of merit (VF・Qcj[1]) to approximately 67 %[2] over the first-generation for higher non-repetitive peak forward surge currents and lower forward voltage of up to 1.45 V, with a maximum of 97 A[3]. Because of these matters, new products are less breakable and have low power dissipation. And, by their high voltage and low power dissipation, the new SiC SBD products can operate under higher voltage or higher current than existing Si FRD[4] products that use same size package. The new products increase efficiency and margin of thermal design by decrements of heat dissipation which derives from their low power dissipation.

Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.