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TOSHIBA 降低車載設備功耗的小型表面貼裝的40V／60V N溝道功率MOSFET

Product News 2020-05

The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

東芝電子元件及存儲裝置株式會社推出四款新型的N溝道功率MOSFET，採用小型和表面黏貼的TSON Advance（WF）封裝，低導通電阻N溝道MOSFET的新產品並適用於車用設備。40 V “XPN3R804NC” , “XPN7R104NC,” 60 V “XPN6R706NC” , “XPN12006NC.”

新產品封裝使用 TSON Advance(WF) , 有助於自動目視檢查電路板的安裝條件。此外，採用東芝“ U-MOSVIII-H”工藝的低導通電阻產品有助於設備節能。這使我們能夠替代相同尺寸包裝的東芝傳統產品。通過替代類似的5×6 mm尺寸的產品，性能的提高還可有助於ECU的小型化。

產品特點

通過AEC-Q101認證
低導通電阻 :
RDS(ON)=3.8 mΩ (max) @VGS=10 V (XPN3R804NC)
RDS(ON)=7.1 mΩ (max) @VGS=10 V (XPN7R104NC)
RDS(ON)=6.7 mΩ (max) @VGS=10 V (XPN6R706NC)
RDS(ON)=12.0 mΩ (max) @VGS=10 V (XPN12006NC)
小型且黏貼 TSON Advance(WF) 封裝: 3.3×3.6 mm (typ.)

應用

車用設備

Switching regulators (交換式穩壓器)
DC-DC converters
馬達驅動

產品規格

(Unless otherwise specified, @Ta=25 °C)

Part number			XPN3R804NC	XPN7R104NC	XPN6R706NC	XPN12006NC
Polarity			N-channel
Package	Name		TSON Advance(WF)
Package	Size typ. (mm)		3.3×3.6
Absolute maximum ratings	Drain-source voltage VDSS (V)		40	40	60	60
	Drain current (DC) ID (A)		40	20	40	20
	Drain current (pulsed) IDP (A)		80	60	80	60
	Channel temperature Tch (°C)		175
Thermal characteristics	Channel-to-case thermal impedance Zth(ch-c) max (°C/W)	@Tc= 25 °C	1.5	2.3	1.5	2.3
Electrical characteristics	Drain-source On-resistance RDS(ON) max (mΩ)	@VGS= 4.5 V	7.8	14.2	13.3	23.7
Electrical characteristics	Drain-source On-resistance RDS(ON) max (mΩ)	@VGS= 10 V	3.8	7.1	6.7	12.0
Series			U-MOSVIII-H

Internal Circuits

Application Circuit Examples

The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

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