Toshiba Develops 40V N-channel Power MOSFETs with Improved Thermal Performance
July 31, 2018
Toshiba Electronic Devices & Storage Corporation
- New packaging provides double-sided cooling for improved heat dissipation
TOKYO—In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.
The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.
The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI[1]. The DSOP Advance(WF) package has a wettable flank terminal structure[2].
Applications
- Electric power steering
- Load switches
- Electric pumps
Features
- Qualified for AEC-Q101, suitable for automotive applications
- Double-sided cooling package with top plate[3] and drain
- Improved AOI visibility due to wettable flank structure
- U-MOS IX-H series featuring low On-resistance and low noise characteristics
Main Specifications
(@Ta=25℃)
| Part number | Absolute maximum ratings |
Drain-source On-resistance RDS(ON)max(mΩ) |
Built-in Zener Diode between Gate-Source | Series | Package | ||
|---|---|---|---|---|---|---|---|
|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
@VGS＝ 6V |
@VGS= 10V | ||||
| TPWR7904PB | 40 | 150 | 1.3 | 0.79 | No | U-MOS IX-H | DSOP Advance(WF)L |
| TPW1R104PB | 120 | 1.96 | 1.14 | DSOP Advance(WF)M | |||
Notes:
[1] EMI (Electromagnetic interference)
[2] Wettable flank terminal structure: A terminal structure that allows AOI (Automated Optical Inspection) of installation on boards.
[3] Be aware that the top plate has the same electric potential as the sources; however, not intended for an electrode.