TOSHIBA Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched four 650 V Schottky Barrier Diode (SBD) products to expand its lineup : “TRS12N65FB,” “TRS16N65FB,” “TRS20N65FB,” and “TRS24N65FB” that use SiC (Silicon Carbide), a new material allowing higher efficiency of power supply PFCs (Power Factor Corrections). They use the TO-247 package and offer four forward DC current ratings (Both Legs) - 12 A, 16 A, 20 A, and 24 A - supporting increase of power of equipment.
The new products are Toshiba’s second-generation SiC SBDs with the improved JBS (Junction Barrier controlled Schottky) structure. They feature high surge current capability and low-loss characteristics, with a non-repetitive peak forward surge current rating (Per Leg) of 92 A[1], about 53 %[2] improvement, and typical forward voltage (Pre Leg) of 1.45 V, about 6 %[2] reduction compared with our first-generation products. These features allow higher efficiency and larger margins in thermal design of equipment.

Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.