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2021-04-27  2406

TOSHIBA Lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM10N954L,” a common-drain 12 V N-channel MOSFET for battery protection circuits used for Lithium-ion (Li-ion) battery packs of mobile devices and other equipment to expand the lineup.

Li-ion battery packs use highly robust protection circuits to enhance safety. And it is also demanded to reduce heat generation during charging/discharging Li-ion battery. Such protection circuits require low power loss and high-density mounting, therefore, small and thin MOSFETs with low On-resistance are needed.

Similar to the previously released SSM6N951L, the new product uses its micro process and has further reduced its On-resistance. This allows the product to offer low power loss because of its industry-leading[1] low On-resistance characteristics. And by also featuring low standby power consumption because of its low leakage current from the gate (low gate-source leakage current), it helps batteries to operate for longer time. In addition, it uses the new package TCSPAC-153001 (1.49 mm x 2.98 mm, t : 0.11 mm (typ.)).

Notes :
[1] Comparison with the product of the same maximum rating, according to a survey by Toshiba as of March 2021.

Features

 
  • Industry-leading[1] low On-resistance : RSS(ON)=2.2 mΩ (typ.) @VGS=3.8 V
  • Industry-leading[1] low gate-source leakage current : IGSS=±1 µA (max) @VGS=±8 V
  • Small size surface mounting TCSPAC-153001 package : 1.49 mm × 2.98 mm, t : 0.11 mm (typ.)
  • Common-drain structure that can be easily used in battery protection circuits

Applications

 

Devices with a Li-ion battery pack

  • Office and personal devices (Smartphones, tablets, power banks and wearable devices, etc.)
  • Consumer electronics devices (Game consoles, electric toothbrushes, compact digital cameras and digital single-lens reflex cameras, etc.)

Product Specifications

(@Ta=25 °C)

Part number SSM10N954L SSM6N951L[2]
Configuration N-channel common-drain
Absolute
maximum
ratings
Source-source voltage VSSS (V) 12
Gate-source voltage VGSS (V) ±8
Source current (DC) IS (A) 13.5 8
Gate-source leakage current
IGSS max @VGS=±8 V (µA)
±1
Source-source
On-resistance
RSS(ON) typ.
(mΩ)
@VGS=4.5 V 2.1 4.4
@VGS=3.8 V 2.2 4.6
@VGS=3.1 V 2.4 4.9
@VGS=2.5 V 3.1 5.5
Package Name TCSPAC-153001 TCSP6A-172101
Size typ. (mm) 1.49 × 2.98, t : 0.11 2.14 × 1.67, t : 0.11

Notes :
[2] Previously released product

Equivalent Circuit

The illustration of equivalent circuit of lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L.

Application Circuit Example

The illustration of application circuit example of lineup expansion of small, low On-resistance common-drain MOSFET products helping battery-driven devices operate for longer periods of time : SSM10N954L.